Lithographic mask defects mitigation on a multimode interference structure

P. Lourenço, A. Fantoni, J. Costa, M. Vieira


Download Paper

Base Information

Volume

V53 - N3 / 2020 Ordinario

Reference

51042: 1-11

DOI

http://dx.doi.org/10.7149/OPA.53.3.51042

Language

English

Keywords

Beam propagation method, finite differences time domain, multimode interference, lithographic resolution, graphene, chemical potential

Abstract

Over the last decades, the lithographic technology has greatly contributed for the confirmation of Moore's law in the semiconductor industry. Key developments in lithography such as the operational wavelength decreasing, together with a performance increase in lens and imaging technology, enabled the reduction of cost per function in integrated circuits technology. In this work, the impact of lithographic defects introduced by the manufacturing process is analyzed through simulations and two mitigation techniques are presented. These perturbations are a consequence of the limited lithographic mask resolution reflected on deviations from the geometry of the ideal device. For this purpose, the Beam Propagation and Finite Differences Time Domain methods have been used to simulate a multi-mode interference structure based on silicon nitride. The structure is affected by random perturbations and the obtained results revealed a strong dependence between mask resolution, and imbalance and power loss.
Two strategies have been followed concerning the mitigation of power loss and imbalance:
- Access waveguides tapering and adjustable power splitting ratios through the electro-optic effect.

Both strategies revealed results that indicate an improvement on device's performance. However, once built, the former is a static design that favors indiscriminately all propagating modes in the multimode section. In the latter, finer tuning capabilities targeting different propagating modes may be enabled by dynamic compensation of power loss and imbalance, when in a closed loop control architecture. Such a control architecture may operate by sampling the output waveguides, extracting the error signal and, finally, negatively feeding it back to the electrooptic effect system, hence improving imbalance and power loss.

References

0

L. R. Harriott, "Limits of lithography," Proc. IEEE, vol. 89, no. 3, pp. 366-374, 2001.

1

M. Watanabe, "Active Matrix Driving and Circuit Simulation," in Features of Liquid Crystal Display Materials and Processes, N. K. Kamanina, Ed. InTech, 2011.[

2

N. Yamauchi, Y. Inaba, and M. Okamura, "An integrated photodetector-amplifier using a-Si p-i-n photodiodes and poly-Si thin-film transistors," IEEE Photonics Technol. Lett., vol. 5, no. 3, pp. 319-321, Mar. 1993.

3

R. Takei, "Amorphous Silicon Photonics," in Crystalline and Non-crystalline Solids, P. Mandacci, Ed. InTech, 2016, p. 21.

4

S. K. Selvaraja et al., "Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry," Opt. Commun., vol. 282, no. 9, pp. 1767-1770, 2009.

5

M. J. Weber, Handbook of Optical Materials, vol. 20, no. 5. CRC Press, 2018.

6

P. Lourenço, A. Fantoni, and M. Vieira, "Simulation analysis of a thin film semiconductor MMI 3dB splitter operating in the visible range," in Fourth International Conference on Applications of Optics and Photonics, Oct. 2019, p. 4.

7

P. Lourenço, A. Fantoni, J. Costa, and M. Vieira, "Lithographic mask defects analysis on an MMI 3 dB splitter," Photonics, vol. 6, no. 4, pp. 1-8, 2019.

8

L. B. Soldano and E. C. M. Pennings, "Optical multi-mode interference devices based on selfimaging: principles and applications," J. Light. Technol., vol. 13, no. 4, pp. 615-627, Apr. 1995.

9

G. Lifante, Integrated Photonics: Fundamentals. Chichester, UK: John Wiley & Sons, Ltd, 2003.

10

M. T. Hill, X. J. M. Leijtens, G. D. Khoe, and M. K. Smit, "Optimizing imbalance and loss in 2 x 2 3-db multimode interference couplers via access waveguide width," J. Light. Technol., vol. 21, no. 10, pp. 2305-2313, Oct. 2003.

11

A. A. Balandin et al., "Superior thermal conductivity of single-layer graphene," Nano Lett., vol. 8, no. 3, pp. 902-907, 2008.

12

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, "Graphene photonics and optoelectronics," Nat. Photonics, vol. 4, no. 9, pp. 611-622, 2010.

13

F. Wang et al., "Gate-variable optical transitions in graphene," Science (80-. )., vol. 320, no. 5873, pp. 206-209, 2008.

14

Z. Lu and W. Zhao, "Nanoscale electro-optic modulators based on graphene-slot waveguides," J. Opt. Soc. Am. B, vol. 29, no. 6, p. 1490, Jun. 2012.

15

M. Silveirinha and N. Engheta, "Tunneling of electromagnetic energy through subwavelength channels and bends using ∈-near-zero materials," Phys. Rev. Lett., vol. 97, no. 15, 2006.

16

R. Liu et al., "Experimental demonstration of electromagnetic tunneling through an epsilon-near-zero metamaterial at microwave frequencies," Phys. Rev. Lett., vol. 100, no. 2, pp. 1-4, 2008.

17

R. Sun et al., "Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer," Appl. Phys. Lett., vol. 94, no. 14, 2009.

18

Synopsys RSoft Solutions. (accessed Jul. 02, 2020).