Raman and Ellipsometric Investigation of 570 nm CdTe thin film layer deposited by RF-Sputtering system
A. Naresh Kumar Reddy, M. Hashemi, P. Verma, S. N. Khonina
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Base Information
Volume
V52 - N2 / 2019 Ordinario
Reference
50127:1-8
DOI
http://doi.org/10.7149/OPA.52.2.50127
Language
English
Keywords
CdTe, RF-Sputtering, Raman Spectroscopy, Ellipsometry, optical absorption, UV-VIS spectroscopy, photovoltaics.
Abstract
In this work, we characterized the 570 nm CdTe layer deposited on a glass substrate by RF-Magnetron sputtering technique at the substrate temperature of 200oC. Four experimental techniques were used in this study to characterize the thin film layer; Raman spectroscopy, Spectroscopic Ellipsometry, X-ray dispersive spectroscopy (EDX) and high-resolution scanning electron microscopy (SEM). An elemental composition, the surface morphology and the phase of the thin film material were discussed. The optical properties such as refractive index, extinction coefficient, and absorption coefficient were investigated for CdTe thin film. The deposited thin film shows the maximum absorption in the visible spectrum which makes it an ideal candidate for photovoltaic applications.
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