Preliminary results of feasibility of self-calibration of silicon pn photodiodes at room temperature using temperature sensors
E. Borreguero, C. K. Tang, J. Gran, A. Pons, J. Campos
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Base Information
Volume
V51 - N2 / 2018 Ordinario
Reference
50013:1-8
DOI
http://doi.org/10.7149/OPA.51.2.50013
Language
English
Keywords
Self-calibration, radiometer, silicon photodiode, PQED.
Abstract
Predictable quantum efficient detectors (PQEDs), based on photoelectric effect in silicon semiconductor, have proved their potential as optical radiant power primary standard. At present, simulations for semiconductor devices are the common method to predict the response of a PQED. As an alternative, this work investigates the feasibility of an experimental technique, the self-calibration of silicon photodiodes at room temperature by means of temperature sensors. A device which compares two physics principles by optical power, working both as a photodetector and a radiometer based on electrical substitution, was made. The device allows for measuring the current generated under irradiation (in photocurrent mode) and the heating of the system, induced by a laser or forward biasing, to determine the optical power (in thermal mode). The feasibility study consists of testing the equivalence between both modes and establishing the suitable range of optical power. The range of optimum optical power level, where both modes run in the linear domain at the present configuration, is from 300 µW up to 1 mW. Within this range, the optical power experimental uncertainty is lower than 1%.
References
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